 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| BSP 30 ... BSP 33 PNP Switching Transistors PNP Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren fur die Oberflachenmontage Power dissipation - Verlustleistung 1.65 4 0.2 0.3 6.5 0.1 3 0.2 1.3 W SOT-223 0.04 g Plastic case Kunststoffgehause 3.5 Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle 1 0.7 2.3 2 3 3.25 Dimensions / Mae in mm 1 = B 2, 4 = C 3 = E Maximum ratings (TA = 25/C) 7 Grenzwerte (TA = 25/C) BSP 30 BSP 31 BSP 32 BSP 33 80 V 90 V 5V 1.3 W 1) 1A 2A 200 mA 150/C - 65...+ 150/C Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation - Verlustleistung Collector current - Kollektorstrom (dc) B open E open C open - VCE0 - VCB0 - VEB0 Ptot - IC - ICM - IBM Tj TS 60 V 70 V Peak Collector current - Koll.-Spitzenstrom Peak Base current - Basis-Spitzenstrom Junction temp. - Sperrschichttemperatur Storage temperature - Lagerungstemperatur Characteristics (Tj = 25/C) Min. Collector-Base cutoff current - Kollektorreststrom IE = 0, - VCB = 60 V IE = 0, - VCB = 60 V, Tj = 150/C Emitter-Base cutoff current - Emitterreststrom IC = 0, - VEB = 5 V - IC = 150 mA, - IB = 15 mA - IC = 500 mA, - IB = 50 mA - IEB0 - VCEsat - VCEsat - - - - ICB0 - ICB0 - - Kennwerte (Tj = 25/C) Typ. - - - - - Max. 100 nA 50 :A 100 nA 250 mV 500 mV Collector saturation volt. - Kollektor-Sattigungsspg. 2) 1 ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 2 ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% 2 01.11.2003 Switching Transistors Characteristics (Tj = 25/C) Min. Base saturation voltage - Basis-Sattigungsspannung 1) - IC = 150 mA, - IB = 15 mA - IC = 500 mA, - IB = 50 mA - VCE = 5 V, - IC = 100 :A - VCE = 5 V, - IC = 100 mA - VCE = 5 V, - IC = 500 mA - VCE = 5 V, - IC = 100 :A - VCE = 5 V, - IC = 100 mA - VCE = 5 V, - IC = 500 mA - VBEsat - VBEsat hFE hFE hFE hFE hFE hFE fT CCB0 CEB0 ton toff - - 10 40 30 30 100 50 100 MHz - - - - RthA RthS BSP 30 ... BSP 33 Kennwerte (Tj = 25/C) Typ. - - - - - - - - - 20 pF 120 pF - - Max. 1V 1.2 V - 120 - - 300 - - - - 500 ns 600 ns 93 K/W 2) 12 K/W DC current gain - Kollektor-Basis-Stromverhaltnis 1) BSP 30 BSP 32 BSP 31 BSP 33 Gain-Bandwidth Product - Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 100 MHz - VCB = 10 V, IE = ie = 0, f = 1 MHz - VEB = 0.5 V, IC = ic = 0, f = 1 MHz Switching times - Schaltzeiten turn-on time turn-off time - ICon = 100 mA, - IBon = 5 mA, IBoff = 5 mA Collector-Base Capacitance - Kollektor-Basis-Kapazitat Emitter-Base Capacitance - Emitter-Basis-Kapazitat Thermal resistance - Warmewiderstand junction to ambient air - Sperrschicht zu umgebender Luft junction to soldering point - Sperrschicht zu Lotpad Recommended complementary NPN transistors Empfohlene komplementare NPN-Transistoren BSP 40, BSP 41, BSP 42, BSP 43 ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 01.11.2003 1 2 3 |
Price & Availability of BSP31
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |